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神经形态计算:用于类脑芯片的仿生人工突触忆阻器研究电子书

1.类脑芯片核心器件研究2.GO基纳米复合材料体系3.制备表征性能全流程覆盖4.四种材料方案对比优选5.神经形态计算关键技术

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作       者:李蕾

出  版  社:电子工业出版社

出版时间:2026-02-01

字       数:15.3万

所属分类: 科技 > 工业技术 > 航空/电子

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本专著研究用于类脑芯片的仿生人工突触忆阻器,分别针对类脑芯片神经形态材料表征、制备和忆阻特性研究。内容分为五章,第一章 绪论,第二章 PBD: GO纳米复合物忆阻器制备、表征及其忆阻特性研究,第三章 PMMA: GO纳米复合物忆阻器制备、表征及其忆阻特性研究,第四章 MOF: GO纳米复合物忆阻器制备、表征及其忆阻特性研究,第五章 GO: GQDs纳米复合物忆阻器制备、表征及其忆阻特性研究。本书为神经形态计算与忆阻器类脑芯片领域的系统性研究成果凝练,旨在为相关领域的研究者与工程实践者提供重要参考。<br/>【作者】<br/>李蕾,工学博士,化学博士后,黑龙江省E类高层次人才、黑龙江省科协优秀青年科技人才,黑龙江大学电子工程学院副教授、电子科学与技术博士后科研流动站工作秘书、硕士生导师,中国微米纳米技术学会高级会员。主要从事新型信息存储技术、集成电路设计与制造及神经形态计算方向的研究,尤其在忆阻器及其类脑计算应用领域积累了丰富的研究成果与实践经验。主持黑龙江省青年科学基金、黑龙江省普通本科高等学校青年创新人才培养计划项目等多项省部级科研项目,在国际著名期刊以独立作者或通讯作者发表SCI检索论文近15篇、EI检索论文10篇,获中国微米纳米技术学会2017及2018年学术年会优秀论文奖,并于2025年受邀在中国微米纳米技术学会主办的微纳器件与系统创新论坛作分论坛报告。近年来致力于推动忆阻器在神经形态计算中的集成与产业化应用,指导学生承担国家级大学生创新训练计划重项目,牵头展“大规模忆阻器阵列视觉神经形态计算系统研究”等前沿探索。<br/>
目录展开

Preface

Chapter 1 Introduction

1.1 Memristor

1.1.1 What Is The Memristor

1.1.2 How to Fabricate Memristors

1.1.3 What Is The Memristive Characteristic

1.1.4 What Is The Operational Mechanism for Memristors

1.2 Biomimic Artificial Devices

1.2.1 What Is The Biomimic Artificial Device

1.2.2 How to Confront The Issue and Infinite Probability

1.2.3 Memristor Is A Current and Future Promise for Biomimic Artificial Synapse Device

Chapter 2 Memristor Fabrication,Characterization,and Properties Research Based on PBD:GO Nanocomposites

2.1 Memristor Fabrication on The Basis of PBD:GO Nanocomposites

2.2 Characterization of PBD:GO Nanocomposites

2.2.1 TEM Characterization

2.2.2 SEM Characterization

2.2.3 TGA-DTG Analysis

2.2.4 FTIR Spectrum

2.2.5 Raman Spectrum

2.2.6 XRD Characterization

2.2.7 Fluorescent Spectrum

2.3 Memristive Characteristics Based on PBD:GO Nanocomposites

2.3.1 Effect of Chemical Composition on Memristive Characteristics

2.3.2 Cycle-to-Cycle Endurance

2.3.3 Device-to-Device Uniformity

2.3.4 Retention Ability

2.3.5 Operational Mechanism

2.4 Memristor Fabrication Based on Trilayer-Structure PBD:GO/PMMA/PBD:GO

2.5 Characterization of PBD:GO Nanocomposite and PMMA

2.5.1 SEM Characterization

2.5.2 TEM Characterization

2.5.3 TGA-DTG Analysis

2.5.4 UV-Visible Absorption and Fluorescent Spectrum

2.6 Better Memristive Characteristics of ITO/PBD:GO/PMMA/PBD:GO/Ni

2.6.1 Effect of Chemical Component Weight on Memristive Characteristics

2.6.2 Cycle-to-Cycle Endurance

2.6.3 Retention Ability

2.6.4 Device-to-Device Uniformity

2.6.5 Operational Mechanism

Chapter 3 Memristor Fabrication,Characterization,and Characteristics Research Based on PMMA:GO Nanocomposites

3.1 Memristor Fabrication Based on PMMA:GO Nanocomposites

3.2 Characterization of PMMA:GO Nanocomposites

3.2.1 SEM Characterization

3.2.2 FTIR Spectrum

3.2.3 TEM Characterization

3.2.4 XRD Characterization

3.2.5 UV-Visible Absorption Spectrum

3.2.6 Fluorescent Spectrum

3.3 Memristive Characteristics Based on PMMA:GO Nanocomposites

3.3.1 Effect of Chemical Component Weight Ratio on Memristive Characteristics

3.3.2 Cycle-to-Cycle Endurance

3.3.3 Retention Ability

3.3.4 Operation Mechanism

Chapter 4 Memristor Fabrication,Characterization,and Characteristics Based on Mg-MOF-74:GO Nanocomposites

4.1 Memristor Fabrication Based on Mg-MOF-74:GO Nanocomposites

4.2 Characterization of Mg-MOF-74:GO Nanocomposites

4.2.1 SEM Characterization

4.2.2 FTIR Spectrum

4.2.3 TEM Characterization

4.2.4 XRD Characterization

4.2.5 Raman Spectrum

4.2.6 Thermal Analysis

4.3 Memristive Characteristics Based on Mg-MOF-74:GO Nanocomposites

4.3.1 Effect of Chemical Component Weight Ratio on Memristive Characteristics

4.3.2 Cycle-to-Cycle Endurance

4.3.3 Retention Ability

4.3.4 Operational Mechanism

Chapter 5 Memristor Fabrication,Characterization,and Memristive Characteristic Based on GO:GQDs Nanocomposites

5.1 Memristor Fabrication Based on GO:GQDs Nanocomposites

5.2 Characterization of GO:GQDs Nanocomposites

5.2.1 SEM Characterization

5.2.2 FTIR Spectrum

5.2.3 TEM Characterization

5.2.4 Raman Spectrum

5.2.5 TGA-DTG Analysis

5.3 Memristive Characteristics Based on GO:GQDs Nanocomposites

5.3.1 Effect of Chemical Component Weight Ratio on Memristive Characteristics

5.3.2 Cycle-to-Cycle Endurance

5.3.3 Device-to-Device Uniformity

5.3.4 Retention Ability

5.3.5 Operational Mechanism

Conclusion

References

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